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2021 Hengli Energy co., LTD

2022-03-11

In order to strengthen the cohesion and teamwork ability of the enterprise team, stimulate the enthusiasm of the employees to actively participate in various activities of the company, and strengthen and consolidate the employees' concept of the company, Hengli Energy organized a one-day team building activity on December 24, 2021.
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17/5000 2021 is the prologue, 2022 is the expectation

2022-03-11

On the occasion of the approaching of the New Year's Day in 2022, Hengli Energy would like to extend the most sincere wishes and warmest greetings to all customers, partners, employees and families, and wish you a happy New Year!
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Energy early news: New energy storage capacity will exceed 4 million kilowatts

2022-03-11

New energy storage installations will exceed 4 million kilowatts. China's new-type energy storage capacity is expected to exceed 4 million kilowatts by the end of this year, Liu Yafang, deputy director of the National Energy Administration's science and technology equipment department,
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Photovoltaic power generation

2022-03-11

Photovoltaic power generation (PV) is a technology that converts light energy directly into electric energy by using the photogenerating volt effect of semiconductor interface. It is mainly composed of solar panels (components), controllers and inverters, and the main components are composed of electronic components. Solar cells are packaged and protected in series to form large-area solar cell modules, and then combined with power controllers and other components to form photovoltaic power generation devices.
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Principle of photovoltaic power Generation

2022-03-11

If light hits the solar cell and is absorbed at the interface layer, photons with enough energy can excite electrons from covalent bonds in both p-type and N-type silicon to create electron-hole pairs. Electrons and holes near the interface layer will be separated from each other by an electric field of space charges before recombining. The electrons move toward the positively charged N region and the holes toward the negatively charged P region.
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